Vishay launches an industry first for standard gate drives…

From 12th August 2019 Vishay Intertechnology have launched a new 60 V MOSFET which increases efficiency and power density with RDS(ON) of 4 mΩ in 3.3 mm2 Footprint. The Vishay Siliconix SiSS22DN features a low gate charge of 22.5 nC along with low output charge (QOSS).

Unlike logic-level 60 V devices, the typical VGS(th) and Miller plateau voltage of the SiSS22DN are enhanced for circuits with gate drive voltages above 6 V, where the device provides optimized dynamic characteristics that enable short dead-times and prevent shoot-through in synchronous rectifier applications. To read the full press release, click here.